APT50GP60JDQ2 Datasheet | Advanced Power Technology

.. TYPICAL PERFORMANCE CURVES ® APT50GP60JDQ2 600V POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. - Low Conduction Loss - Low Gate Charge - Ultrafast Tail Current shutoff - SSOA Rated ISOTOP ® "UL Recognized" file # E145592 MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current All Ratings: TC = 25°C unless otherwise specified. APT50GP60JDQ2 UNIT Volts 600 ±30 100 46 190 190A @ 600V 329 -55 to 150 300 Amps Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 525µA) Gate Threshold Voltage (VCE = VGE, I C = 1m A, Tj = 25°C) MIN TYP MAX Units 600 3 4.5 2.2 2.1 525 6 2.7 Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) Volts I CES I GES Gate-Emitter Leakage Current (VGE = ±20V) ±100 n A CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. 050-7496 APT Website - http://.advancedpower....