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APT75GP120J
1200V
POWER MOS 7 IGBT
G
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
®
E C
E
SO
ISOTOP ®
2 T-
27
"UL Recognized"
• Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff
• 50 kHz operation @ 800V, 20A • 20 kHz operation @ 800V, 44A • RBSOA rated
G
C
E
MAXIMUM RATINGS
Symbol VCES VGE
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All Ratings: TC = 25°C unless otherwise specified.
APT75GP120J Datasheet
