APT75GP120JDQ3 Datasheet | Advanced Power Technology

TYPICAL PERFORMANCE CURVES ® APT75GP120JDQ3 1200V POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. - Low Conduction Loss - Low Gate Charge - Ultrafast Tail Current shutoff - 50 k Hz operation @ 800V, 20A - 20 k Hz operation @ 800V, 44A - RBSOA Rated ISOTOP ® "UL Recognized" file # E145592 MAXIMUM RATINGS Symbol VCES VGE .. All Ratings: TC = 25°C unless otherwise specified. APT75GP120JDQ3 UNIT Volts Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1200 ±20 128 57 300 300A @ 960V 543 -55 to 150 300 I C1 I C2 I CM RBSOA PD TJ,TSTG TL Amps @ TC = 150°C Reverse Bias Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1250µA) Gate Threshold Voltage (VCE = VGE, I C = 2.5m A, Tj = 25°C) MIN TYP MAX Units 1200 3 4.5 3.3 3.0 1250 6 3.9 Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) Volts I CES I GES Gate-Emitter Leakage Current (VGE =...