APTM10AM02F Datasheet | Advanced Power Technology

Features - Power MOS V® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Fast intrinsic diode - Very rugged - Kelvin source for easy drive - Very low stray inductance - Symmetrical design - M5 power connectors - High level of integration Benefits - Outstanding performance at high frequency operation - Direct mounting to heatsink (isolated package) - Low junction to case thermal resistance - Low profile G1 OUT S1 Q2 G2 S2 0/VBUS .. G1 E1 VBUS 0/VBUS E2 G2 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C m J These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://.advancedpower. 1-6 APTM10AM02F- Rev 0 May, 2005 Tc = 25°C Max ratings 100 495 370 1900 ±30 2.5 1250 100 50...