Advanced Power Technology APTM10AM05FT
MOSFET Power Module
FEATURES
● Power MOS V® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged● Kelvin source for easy drive
● Very low stray inductance - Symmetrical design - Lead frames for power connections
● Internal thermistor for temperature monitoring
● High level of integration Benefits
● Outstanding performance at high frequency operation
● Direct mounting to heatsink (isolated package)
● Low junction to case thermal resistance
● Solderable terminals both for power and signal for easy PCB mounting
● Low profile G1 S1 OUT Q2 G2 S2 0/VBU S NTC1 G2 S2 OUT VBUS 0/VBUS OUT S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C mJ These Devices are sensitive to Electrostatic Discharge.