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APTM10AM05FT Datasheet PDF

Advanced Power Technology APTM10AM05FT

MOSFET Power Module

Part No. APTM10AM05FT
Datasheet APTM10AM05FT Download
Manufacturer
Advanced Power Technology
Description MOSFET Power Module
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APTM10AM05FT datasheet page 1 preview

FEATURES

● Power MOS V® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged
● Kelvin source for easy drive
● Very low stray inductance - Symmetrical design - Lead frames for power connections
● Internal thermistor for temperature monitoring
● High level of integration Benefits
● Outstanding performance at high frequency operation
● Direct mounting to heatsink (isolated package)
● Low junction to case thermal resistance
● Solderable terminals both for power and signal for easy PCB mounting
● Low profile G1 S1 OUT Q2 G2 S2 0/VBU S NTC1 G2 S2 OUT VBUS 0/VBUS OUT S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C mJ These Devices are sensitive to Electrostatic Discharge.
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