Power MOS V® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged.
Kelvin source for easy drive.
Very low stray inductance - Symmetrical design - Lead frames for power connections.
Internal thermistor for temperature monitoring.
High level of integration Benefits.
Outstanding performance at high frequency operation.
Full PDF Text Transcription for APTM10AM05FT (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
APTM10AM05FT. For precise diagrams, and layout, please refer to the original PDF.
APTM10AM05FT Phase leg MOSFET Power Module VBUS Q1 NTC2 VDSS = 100V RDSon = 4....
APTM10AM05FT Datasheet
