MS2092
MS2092 is RF & MICROWAVE TRANSISTORS manufactured by Advanced Power Technology.
DESCRIPTION
KEY FEATURES
The MS2092 is an internally matched, mon base silicon bipolar device optimized pulsed application in the 600
- 750 MHz frequency range. Housed in the industry standard AMPAC™ metal/ceramic package, this device uses a refractory/gold overlay die geometry for ruggedness and long-term reliability.
- Refractory/Gold Metallization
- Internal Input Matching
- Metal/Ceramic Hermetic Package
- POUT = 440 W Min.
- GP = 7.0 d B Gain
APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS
- Avionics Applications
ABSOLUTE MAXIMUM RATINGS (TCASE = 25° C)
Symbol PDISS IC VCC TJ TSTG
Parameter Power Dissipation- ( T C 75° C) Device Current- Collector-Supply Voltage- Junction Temperature Storage Temperature
THERMAL DATA
Value 1500 32.0 55 200 -65 to +200
Unit W A V °C °C
RTH(j-c)
Junction-Case Thermal Resistance
°C/W
- Applies only to rated RF amplifier operation
MS2092.PDF 2-10-04
Page 1 Visit our website at .ADVANCEDPOWER. or contact our factory direct
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Data Sheet 4 U .
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RF & MICROWAVE TRANSISTORS
STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C)
Symbol BVCBO BVEBO BVCER ICES ICBO h FE IC = 50 m A IE = 5 m A IC = 50m A VCE = 50 V VCB = 50 V VCE = 5 V
Test Conditions IE = 0 m A IC = 0 m A RBE = 10 Ω
Min. 65 3.5 65
MS2091 Typ.
Max.
Units V V V m A m A
IC = 1 A
35 25 120
DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C)
Symbol POUT ηc...
