BLX96
BLX96 is NPN SILICON RF POWER TRANSISTOR manufactured by Advanced Semiconductor.
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The BLX96 is Designed for Class A Television Band IV- V Amplifier Applications Requiring High Linearity.
PACKAGE STYLE .280 4L STUD
A 45°
Features
:
- PG = 7.0 d B Typical at 860 MHz
- IMD3 = -63 d Bc Typ. at PREF = 0.5 W
- Omnigold™ Metallization System
J E F G I
MAXIMUM RATINGS
IC VCB PDISS TJ TSTG θJC 1.0 A 45 V 16 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 11 C/W
O O O O O O
DIM A B C D E F G H I J K .175 / 4.45 .275 / 6.99 .245 / 6.22 MINIMUM inches / mm
#8-32 UNC MAXIMUM inches / mm
1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30
1.055 / 26.80 .230 /5.84 .285 / 7.24 .007 / 0.18 .137 / 3.48
.255 / 6.48 .640 / 16.26 .217 / 5.51 .285 / 7.24
ORDER CODE: ASI10784
CHARACTERISTICS
SYMBOL
BVCEO BVCER BVCBO BVEBO h FE COB PG IMD3 IC = 40 m A IC = 40 m A IC = 2 m A IE = 0.5 m A VCE = 20 V VCB = 20 V
TC = 25 C
TEST CONDITIONS
RBE = 10 Ω
MINIMUM TYPICAL MAXIMUM
24 50 45 3.5
UNITS
IC = 250 m A f = 1.0...
