BLX94C Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BLX94C UHF power transistor Product specification 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor Features - Withstands full load mismatch - Emitter ballasting resistors for an optimum temperature profile - Gold metallization ensures excellent reliability. APPLICATIONS - Transmitting applications in the UHF range with a nominal supply voltage up to 28 V. PINNING - SOT122A PIN 1 2 3 4 SYMBOL c e b e emitter base emitter DESCRIPTION collector MAM229 DESCRIPTION NPN silicon planar epitaxial transistor primarily intended for class-A, B or C operation. The transistor is encapsulated in a 4-lead SOT122A stud envelope with a ceramic cap. handbook, halfpage 4 c 1 3 b e Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon emitter test circuit. MODE OF OPERATION CW, class-B f (MHz) 470 VCE (V) 28 PL (W) 25 Gp (d B) >6.5 ηC (%) >55 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the Be O disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor LIMITING VALUES In accordance with the...