VHB10-12F
VHB10-12F is NPN SILICON RF POWER TRANSISTOR manufactured by Advanced Semiconductor.
DESCRIPTION
:
The ASI VHB10-12F is Designed for
PACKAGE STYLE .380 4L FLG
B .112 x 45° A Ø.125 NOM. FULL R J .125
FEATURES
:
- -
- Omnigold™ Metalization System
MAXIMUM RATINGS
IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC
C D F E H I
2.0 A 36 V 18 V 36 V 4.0 V 20 W @ TC = 25 OC -65 C to +200 C -65 C to +150 C 8.8 OC/W
DIM A B C D E F G H I J
MINIMUM inches / mm
MAXIMUM inches / mm
.220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64
.230 / 5.84
.730 / 18.54 .980 / 24.89 .385 / 9.78
.004 / 0.10 .085 / 2.16 .160 / 4.06
.006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11
.240 / 6.10
.255 / 6.48
ORDER CODE: ASI10712
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVEBO ICBO h FE COB PG ηC IC = 15 m A IC = 50 m A
TC = 25 C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
18 36 4.0 1.0
UNITS
V V V m A --p F d B
IE = 2.5 m A VCB = 12.5 V VCE = 5.0 V VCB = 12.5 V VCC = 12.5 V POUT = 10 W IC = 250 m A f = 1.0 MHz f = 175 MHz
200...
