Advanced Semiconductor VHB10-12S
VHB10-12S is Designed for PACKAGE STYLE .380 4L STUD .112x45° A FEATURES: • • • Omnigold™ Metalization System B ØC MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC 2.0 A 36 V 18 V 36 V 4.0 V 20 W @ TC = 25 C -65 OC to +200 OC -65 OC to +150 OC 8.8 OC/W O DIM A B C D E F G H I J D H I J #8-32 UNC-2A F E G MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05 ORDER CODE: ASI10713...| Part No. | VHB10-12S |
|---|---|
| Datasheet | VHB10-12S Download |
| Manufacturer |  Advanced Semiconductor |
| Description | NPN SILICON RF POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
: The ASI VHB10-12S is Designed for PACKAGE STYLE .380 4L STUD .112x45° AFEATURES
:●
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● Omnigold™ Metalization System B ØC
MAXIMUM RATINGS
IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC 2.0 A 36 V 18 V 36 V 4.0 V 20 W @ TC = 25 C -65 OC to +200 OC -65 OC to +150 OC 8.8 OC/W O DIM A B C D E F G H I J D H I J #8-32 UNC-2A F E G MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05 ORDER CODE: ASI10713 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO hFE COB PG ηC IC = 15 mA IC = 50 mA TC = 25 C O NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 18 36 4.0 1.0 UNITS V V V mA --pF dB IE = 2.5 mA VCB = 15 V VCE = 5.0 V VCB = 12.5 V VCE = 12.5 V POUT = 10 W IC = 250 mA f = 1.0 MHz f = 175 MHz 5.0 200 45 10 60 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE● NORTH HOLLYWOOD, CA 91605
● (818) 982-1200
● FAX (818) 765-3004 Specifications are subject to change without notice.