VHB10-12S
VHB10-12S is NPN SILICON RF POWER TRANSISTOR manufactured by Advanced Semiconductor.
DESCRIPTION
:
The ASI VHB10-12S is Designed for
PACKAGE STYLE .380 4L STUD
.112x45° A
FEATURES
:
- -
- Omnigold™ Metalization System
ØC
MAXIMUM RATINGS
IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC 2.0 A 36 V 18 V 36 V 4.0 V 20 W @ TC = 25 C -65 OC to +200 OC -65 OC to +150 OC 8.8 OC/W
DIM A B C D E F G H I J
#8-32 UNC-2A F E
MINIMUM inches / mm
MAXIMUM inches / mm
.220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94
.230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05
ORDER CODE: ASI10713
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVEBO ICBO h FE COB PG ηC IC = 15 m A IC = 50 m A
TC = 25 C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
18 36 4.0 1.0
UNITS
V V V m A --p F d B
IE = 2.5 m A VCB = 15 V VCE = 5.0 V VCB = 12.5 V VCE = 12.5 V POUT = 10 W IC = 250 m A f = 1.0 MHz f = 175 MHz
200 45
10 60
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL...
