VHB10-28F
VHB10-28F is NPN SILICON RF POWER TRANSISTOR manufactured by Advanced Semiconductor.
DESCRIPTION
:
The ASI VHB10-28F is Designed for
PACKAGE STYLE .380 4L FLG
.112 x 45° A Ø.125 NOM. FULL R J .125
FEATURES
:
- -
- Omnigold™ Metalization System
MAXIMUM RATINGS
IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC
C D F E H I
1.0 A 65 V 35 V 65 V 4.0 V 13.0 W @ TC = 25 OC -65 C to +200 C -65 C to +150 C 5.5 OC/W
DIM A B C D E F G H I J
MINIMUM inches / mm
MAXIMUM inches / mm
.220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .004 / 0.10 .085 / 2.16 .160 / 4.06 .240 / 6.10
.230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48
ORDER CODE: ASI10721
CHARACTERISTICS
SYMBOL
BVCBO BVCES BVCEO BVEBO ICBO h FE COB PG ηC
TC = 25 C
NONETEST CONDITIONS
IC = 200 m A IC = 200 m A IC = 200 m A IE = 10 m A VCB = 30 V VCE = 5.0 V VCB = 28 V VCC = 28 V POUT = 10 W IC = 200 m A f = 1.0 MHz f = 175 MHz
MINIMUM TYPICAL MAXIMUM
65 65 35 4.0 1.0 5.0 --15 10 60
UNITS
V V V V m A --p F d B %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
- NORTH HOLLYWOOD, CA 91605
- (818) 982-1200
- FAX (818) 765-3004
Specifications are subject to change without...
