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UT8CR512K32 - UT8CR512K32 16 Megabit SRAM

Key Features

  • ‰ 17ns maximum access time ‰ Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs ‰ CMOS compatible inputs and output levels, three-state bidirectional data bus - I/O Voltage 3.3 volts, 1.8 volt core ‰ Radiation performance - Intrinsic total-dose: 300 Krad(Si) - SEL Immune >100 MeV-cm2/mg - LETth (0.25): 53.0 MeV-cm2/mg - Memory Cell Saturated Cross Section 1.67E-7cm2/bit - Neutron Fluence: 3.0E14n/cm2 - Dose Rate - Upset 1.0E9 rad(Si)/sec - Latchup 1.0E11 rad(Si)/sec ‰.

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Datasheet Details

Part number UT8CR512K32
Manufacturer Aeroflex Circuit Technology
File Size 318.06 KB
Description UT8CR512K32 16 Megabit SRAM
Datasheet download datasheet UT8CR512K32 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Standard Products UT8CR512K32 16 Megabit SRAM Advanced Data Sheet October 2004 www.aeroflex.com/4MSRAM FEATURES ‰ 17ns maximum access time ‰ Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs ‰ CMOS compatible inputs and output levels, three-state bidirectional data bus - I/O Voltage 3.3 volts, 1.8 volt core ‰ Radiation performance - Intrinsic total-dose: 300 Krad(Si) - SEL Immune >100 MeV-cm2/mg - LETth (0.25): 53.0 MeV-cm2/mg - Memory Cell Saturated Cross Section 1.67E-7cm2/bit - Neutron Fluence: 3.0E14n/cm2 - Dose Rate - Upset 1.0E9 rad(Si)/sec - Latchup 1.0E11 rad(Si)/sec ‰ Packaging options: - 68-lead ceramic quad flatpack (20.