UT8CR512K32 Description
Standard Products UT8CR512K32 16 Megabit SRAM Advanced Data Sheet October 2004 .aeroflex./4MSRAM.
UT8CR512K32 Key Features
- I/O Voltage 3.3 volts, 1.8 volt core Radiation performance
- Intrinsic total-dose: 300 Krad(Si)
- SEL Immune >100 MeV-cm2/mg
- LETth (0.25): 53.0 MeV-cm2/mg
- Memory Cell Saturated Cross Section 1.67E-7cm2/bit
- Neutron Fluence: 3.0E14n/cm2
- Dose Rate
- Upset 1.0E9 rad(Si)/sec
- Latchup 1.0E11 rad(Si)/sec Packaging options
- 68-lead ceramic quad flatpack (20.238 grams with lead frame) Standard Microcircuit Drawing 5962-04227