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UT8ER512K32 - Monolithic 16M SRAM

General Description

Pins A(18:0) DQ(31:0) E1 E2 W G VDD1 VDD2 VSS MBE SCRUB SCRUB BUSY BUSY Type I BI I I I I P P P BI I O NC O Description Address Data Input/Output Enable (Active Low) Enable (Active High) Write Enable Output Enable Power (1.8) Power (3.3V) Ground Multiple Bit Error Slave SCRUB Input Master SCRUB

Key Features

  •  20ns Read, 10ns Write maximum access times  Functionally compatible with traditional 512K x 32 SRAM devices  CMOS compatible input and output levels, three-state bidirectional data bus - I/O Voltage 3.3 volt, 1.8 volt core  Operational environment: - Total-dose: 100 krad(Si) - SEL Immune:.

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Datasheet Details

Part number UT8ER512K32
Manufacturer Aeroflex Circuit Technology
File Size 308.77 KB
Description Monolithic 16M SRAM
Datasheet download datasheet UT8ER512K32 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Standard Products UT8ER512K32 Monolithic 16M SRAM Data Sheet July 24, 2012 www.aeroflex.com/memories FEATURES  20ns Read, 10ns Write maximum access times  Functionally compatible with traditional 512K x 32 SRAM devices  CMOS compatible input and output levels, three-state bidirectional data bus - I/O Voltage 3.3 volt, 1.8 volt core  Operational environment: - Total-dose: 100 krad(Si) - SEL Immune: <111MeV-cm2/mg - SEU error rate = 8.1x10-16 errors/bit-day assuming geosynchronous orbit, Adam’s 90% worst environment, and 6600ns default Scrub Rate Period (=97% SRAM availability)  Packaging options: - 68-lead ceramic quad flatpack (6.