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UT8ER512K32 - Monolithic 16M SRAM

Datasheet Summary

Description

Pins A(18:0) DQ(31:0) E1 E2 W G VDD1 VDD2 VSS MBE SCRUB SCRUB BUSY BUSY Type I BI I I I I P P P BI I O NC O Description Address Data Input/Output Enable (Active Low) Enable (Active High) Write Enable Output Enable Power (1.8) Power (3.3V) Ground Multiple Bit Error Slave SCRUB Input Master SCRUB

Features

  •  20ns Read, 10ns Write maximum access times  Functionally compatible with traditional 512K x 32 SRAM devices  CMOS compatible input and output levels, three-state bidirectional data bus - I/O Voltage 3.3 volt, 1.8 volt core  Operational environment: - Total-dose: 100 krad(Si) - SEL Immune:.

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Datasheet Details

Part number UT8ER512K32
Manufacturer Aeroflex Circuit Technology
File Size 308.77 KB
Description Monolithic 16M SRAM
Datasheet download datasheet UT8ER512K32 Datasheet
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Full PDF Text Transcription

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Standard Products UT8ER512K32 Monolithic 16M SRAM Data Sheet July 24, 2012 www.aeroflex.com/memories FEATURES  20ns Read, 10ns Write maximum access times  Functionally compatible with traditional 512K x 32 SRAM devices  CMOS compatible input and output levels, three-state bidirectional data bus - I/O Voltage 3.3 volt, 1.8 volt core  Operational environment: - Total-dose: 100 krad(Si) - SEL Immune: <111MeV-cm2/mg - SEU error rate = 8.1x10-16 errors/bit-day assuming geosynchronous orbit, Adam’s 90% worst environment, and 6600ns default Scrub Rate Period (=97% SRAM availability)  Packaging options: - 68-lead ceramic quad flatpack (6.
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