• Part: ATF-10136
  • Description: 0.5-12 GHz Low Noise Gallium Arsenide FET
  • Manufacturer: Agilent Technologies
  • Size: 35.82 KB
Download ATF-10136 Datasheet PDF
Agilent Technologies
ATF-10136
ATF-10136 is 0.5-12 GHz Low Noise Gallium Arsenide FET manufactured by Agilent Technologies.
- 12 GHz Low Noise Gallium Arsenide FET Technical Data Features - Low Noise Figure: 0.5 dB Typical at 4 GHz - Low Bias: VDS = 2 V, IDS = 20 mA - High Associated Gain: 13.0 dB Typical at 4 GHz - High Output Power: 20.0 dBm Typical P1 dB at 4 GHz - Cost Effective Ceramic Microstrip Package - Tape-and Reel Packaging Option Available [1] Description The ATF-10136 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operating in the 0.5-12 GHz frequency range. This GaAs FET device has a nominal...