ATF-10136 Description
The ATF-10136 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operating in the 0.5-12 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers.
ATF-10136 Key Features
- Low Noise Figure: 0.5 dB Typical at 4 GHz
- Low Bias: VDS = 2 V, IDS = 20 mA
- High Associated Gain: 13.0 dB Typical at 4 GHz
- High Output Power: 20.0 dBm Typical P1 dB at 4 GHz
- Cost Effective Ceramic Microstrip Package
- Tape-and Reel Packaging Option Available [1]