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ATF-10136 - 0.5-12 GHz Low Noise Gallium Arsenide FET

General Description

The ATF-10136 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a cost effective microstrip package.

Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operating in the 0.5-12 GHz frequency range.

Key Features

  • Low Noise Figure: 0.5 dB Typical at 4 GHz.
  • Low Bias: VDS = 2 V, IDS = 20 mA.
  • High Associated Gain: 13.0 dB Typical at 4 GHz.
  • High Output Power: 20.0 dBm Typical P1 dB at 4 GHz.
  • Cost Effective Ceramic Microstrip Package.
  • Tape-and Reel Packaging Option Available [1].

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10136 Features • Low Noise Figure: 0.5 dB Typical at 4 GHz • Low Bias: VDS = 2 V, IDS = 20 mA • High Associated Gain: 13.0 dB Typical at 4 GHz • High Output Power: 20.0 dBm Typical P1 dB at 4 GHz • Cost Effective Ceramic Microstrip Package • Tape-and Reel Packaging Option Available [1] Description The ATF-10136 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operating in the 0.5-12 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers.