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ATF-21186 - 0.5-6 GHz General Purpose Gallium Arsenide FET

General Description

Agilent’s ATF-21186 is a low cost Gallium Arsenide Schottky barrier-gate field effect transistor housed in a surface mount plastic package.

Key Features

  • Low Noise Figure: 0.5 dB Typ. @ 2 GHz.
  • High Output Power: 19 dBm Typ. P1dB @ 2 GHz.
  • High MSG: 13.5 dB Typ. @ 2 GHz.
  • Low Cost Surface Mount Plastic Package.
  • Tape-and-Reel Packaging Option Available[1] Note: 1. Refer to “Tape-and-Reel Packaging for Surface Mount Semiconductors”. 30 20 MSG 10 S 21 MAG 0 0.1 1.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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0.5 – 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-21186 GAIN (dB) 211 Features • Low Noise Figure: 0.5 dB Typ. @ 2 GHz • High Output Power: 19 dBm Typ. P1dB @ 2 GHz • High MSG: 13.5 dB Typ. @ 2 GHz • Low Cost Surface Mount Plastic Package • Tape-and-Reel Packaging Option Available[1] Note: 1. Refer to “Tape-and-Reel Packaging for Surface Mount Semiconductors”. 30 20 MSG 10 S 21 MAG 0 0.1 1 FREQUENCY (GHz) 10 ATF-21186 Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. VDS = 2 V, IDS = 15 mA. Description Agilent’s ATF-21186 is a low cost Gallium Arsenide Schottky barrier-gate field effect transistor housed in a surface mount plastic package.