Datasheet Details
| Part number | ATF-21186 |
|---|---|
| Manufacturer | Agilent Technologies |
| File Size | 55.32 KB |
| Description | 0.5-6 GHz General Purpose Gallium Arsenide FET |
| Datasheet | ATF-21186-Agilent.pdf |
|
|
|
Overview: 0.5 – 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-21186 GAIN.
| Part number | ATF-21186 |
|---|---|
| Manufacturer | Agilent Technologies |
| File Size | 55.32 KB |
| Description | 0.5-6 GHz General Purpose Gallium Arsenide FET |
| Datasheet | ATF-21186-Agilent.pdf |
|
|
|
Agilent’s ATF-21186 is a low cost Gallium Arsenide Schottky barrier-gate field effect transistor housed in a surface mount plastic package.
This general purpose device is designed for use in low noise amplifiers, gain stages, driver amplifiers, and oscillators operating over the VHF, UHF, and microwave frequency ranges.
High gain with two volt operation makes this part attractive for low voltage, battery ope
| Part Number | Description |
|---|---|
| ATF-10136 | 0.5-12 GHz Low Noise Gallium Arsenide FET |
| ATF-331M4 | Low Noise Pseudomorphic HEMT |
| ATF-511P8 | Enhancement Mode Pseudomorphic HEMT |
| ATF-53189 | Pseudomorphic HEMT |
| ATF-531P8 | Pseudomorphic HEMT |
| ATF-54143 | Low Noise Enhancement Mode Pseudomorphic HEMT |
| ATF-541M4 | Low Noise Enhancement Mode Pseudomorphic HEMT |