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AM4435 - -30V P-CHANNEL ENHANCEMENT MODE MOSFET

Key Features

  • The AM4435 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench.
  • -30V/-8.0A, RDS(ON)=16mΩ(typ)@VGS =-10V -30V/-5.0A, RDS(ON)=26mΩ(typ)@VGS =-4.5V Super high density cell design for extremely low technology to provide excellent RDS(ON). RDS(ON).
  • Exceptional on-resistance and maximum DC These devices are particularly suited for low current capability voltage.

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Datasheet Details

Part number AM4435
Manufacturer AiT Semiconductor
File Size 326.85 KB
Description -30V P-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet AM4435 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AiT Semiconductor Inc. www.ait-ic.com   AM4435 MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4435 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench    -30V/-8.0A, RDS(ON)=16mΩ(typ)@VGS =-10V -30V/-5.0A, RDS(ON)=26mΩ(typ)@VGS =-4.5V Super high density cell design for extremely low technology to provide excellent RDS(ON). RDS(ON)  Exceptional on-resistance and maximum DC These devices are particularly suited for low current capability voltage application such as cellular phone and  Full RoHS compliance notebook computer power management and other  Available in SOP8 Package batter powered circuits where high-side switching.