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AFN2326S - 150V N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN2326S, a member of the AFN2326S-Alfa 150V N-Channel Enhancement Mode MOSFET family.

Product Overview

Alfa-MOS

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AFN2326S 150V N-Channel Enhancement Mode MOSFET by Alfa-MOS - Datasheet Preview — Datasheet preview – AFN2326S

Datasheet Details

Part number	AFN2326S
Manufacturer	Alfa-MOS
File Size	330.02 KB
Description	150V N-Channel Enhancement Mode MOSFET
Datasheet	AFN2326S Datasheet
Additional preview pages of the AFN2326S datasheet.

AFN2326S Product details

Description

AFN2326S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

ID=1.5A,RDS(ON)=320mΩ@VGS=10V.
ID=1.4A,RDS(ON)=340mΩ@VGS=6V.
Super high density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.
SOT-23-3L package design.

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Published: Dec 11, 2018 |