AFN2326S Overview
AFN2326S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23-3L ) AFN2326S 150V N-Channel...
AFN2326S Key Features
- ID=1.5A,RDS(ON)=320mΩ@VGS=10V
- ID=1.4A,RDS(ON)=340mΩ@VGS=6V
- Super high density cell design for extremely
- Exceptional on-resistance and maximum DC
- SOT-23-3L package design
- DC/DC Converters
- Load Switch
- LED Backlighting in LCD TVs