AFN3406A Datasheet | Alfa-MOS

Description AFN3406A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23 ) 30V N-Channel Enhancement Mode MOSFET Features 30V/2.4A,RDS(ON)=48mΩ@VGS=10V 30V/1.8A,RDS(ON)=58mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOT-23 package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Define Pin 1 2 3 Symbol G S D Description Gate Source Drain Ordering Information Part Ordering No. Part Marking Package AFN3406AS23RG 06YW SOT-23 ϡʳ 06 parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ϡʳ AFN3406AS23RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.B July 2010 Unit Tape & Reel Quantity 3000 EA .alfa-mos. Page 1 Alfa-MOS Technology 30V N-Channel Enhancement Mode MOSFET Absolute Maximum Ratings (TA=25к Unless otherwise noted) Drain-Source Voltage Gate - Source Voltage Parameter Continuous Drain Current(TJ=150к) Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to...