AFN3430W Datasheet | Alfa-MOS

Description AFN3430W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( TSOP-6 ) 90V N-Channel Enhancement Mode MOSFET Features 90V/4.0A,RDS(ON)=150mΩ@VGS=10V 90V/3.2A,RDS(ON)=155mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TSOP-6 package design Application LED Display DC-DC System LCD Panel Pin Define Pin 1 2 3 4 5 6 Symbol D D G S D D Ordering Information Part Ordering No. Part Marking Package AFN3430WTS6RG 43YW TSOP-6 ϡʳ 43 parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ϡʳ AFN3430WTS6RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Apr. 2012 Description Drain Drain Gate Source...