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AFN3430W Datasheet N-channel MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

AFN3430W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.

Pin Description ( TSOP-6 ) AFN3430W 90V N-Channel Enhancement Mode MOSFET

Key Features

  • 90V/4.0A,RDS(ON)=150mΩ@VGS=10V 90V/3.2A,RDS(ON)=155mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TSOP-6 package design.

AFN3430W Distributor