AFN3468W Datasheet | Alfa-MOS

Description AFN3468W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23-6L ) 150V N-Channel Enhancement Mode MOSFET Features - ID=1.5A,RDS(ON)=320mΩ@VGS=10V - ID=1.4A,RDS(ON)=340mΩ@VGS=6V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - SOT-23-6L package design Application - DC/DC Converters - Load Switch - LED Backlighting in LCD TVs Pin Define Pin 1 2 3 4 5 6 Symbol D D G S D D Description Drain Drain Gate Source Drain Drain Ordering Information Part Ordering No. Part Marking Package AFN3468WS26RG 68WYW SOT-23-6L ※ 68W parts code ※ Y year code ( 0 ~ 9 ) ※ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ※ AFN3468WS26RG : 7” Tape & Reel ; Pb- Free ; Halogen - Free ©Alfa-MOS Technology Corp. Rev.E March 2023 Unit Tape & Reel Quantity 3000 EA .alfa-mos. Page 1 Alfa-MOS Technology 150V N-Channel Enhancement Mode...