AFN3486W Datasheet | Alfa-MOS

Alfa-MOS Technology 110V N-Channel Enhancement Mode MOSFET General Description AFN3486W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23-6L ) Features 105V/3.0A,RDS(ON)=315mΩ@VGS=10V 105V/2.0A,RDS(ON)=295mΩ@VGS=10V 105V/2.0A,RDS(ON)=300mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current...