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AFN3486W - N-Channel MOSFET

Download the AFN3486W datasheet PDF. This datasheet also covers the AFN3486W-Alfa variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFN3486W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • 105V/3.0A,RDS(ON)=315mΩ@VGS=10V 105V/2.0A,RDS(ON)=295mΩ@VGS=10V 105V/2.0A,RDS(ON)=300mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-6L package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN3486W-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN3486W
Manufacturer Alfa-MOS
File Size 429.33 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN3486W Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFN3484S N-Channel Enhancement Mode MOSFET
AFN3488W N-Channel MOSFET
AFN3400A N-Channel MOSFET
AFN3400AS 30V N-Channel MOSFET
AFN3400S N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology AFN3486W 110V N-Channel Enhancement Mode MOSFET General Description AFN3486W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23-6L ) Features 105V/3.0A,RDS(ON)=315mΩ@VGS=10V 105V/2.0A,RDS(ON)=295mΩ@VGS=10V 105V/2.0A,RDS(ON)=300mΩ@VGS=4.