AFN4190S Datasheet | Alfa-MOS

Description AFN4190S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOP-8P ) 100V N-Channel Enhancement Mode MOSFET Features z 100V/15A,RDS(ON)=9.2mΩ@VGS=10V z 100V/10A,RDS(ON)=13mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z SOP-8P package design Application z Networking / Tele / Server z LED Lighting Applications z Quick Charger Applications z DC-DC Primary Side Switch Pin Define Pin 1~3 4 5~8 Symbol S G D Description Source Gate Drain Ordering Information Part Ordering No. Part Marking Package AFN4190SS8RG 4190S SOP-8P ※ A Lot code ※ B Date code ※ AFN4190SS8RG : 13” Tape & Reel ; Pb- Free ; Halogen - Free ©Alfa-MOS Technology Corp. Rev.B...