AFN4608S Description
AFN4608S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN5X6-8L.
AFN4608S Key Features
- ID= 9A,RDS(ON)= 12mΩ@VGS=10V
- ID= 7A,RDS(ON)= 15mΩ@VGS=4.5V
- Super high density cell design for extremely low
- DFN5X6-8L package design
- Networking / Tele / Server
- LED Lighting