AFN4608S Datasheet | Alfa-MOS

Description AFN4608S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN5X6-8L ) Features - ID= 9A,RDS(ON)= 12mΩ@VGS=10V - ID= 7A,RDS(ON)= 15mΩ@VGS=4.5V - Super high density cell design for extremely low RDS (ON) - DFN5X6-8L package design Application - Networking / Tele / Server - LED Lighting Applications - Quick Charger Applications - DC-DC Primary Side Switch Pin Define Pin 1~3 4 5~8 Symbol S G D Description Source Gate Drain Ordering Information Part Ordering No. Part Marking Package AFN4608SFN568RG 4608S DFN5X6-8L ※ 4608S : Parts Code ※ YYMMDD : Date Code ※ AFN4608SFN568RG : 13”Tape & Reel ; Pb- Free ; Halogen- Free Unit Tape & Reel Quantity 2500 EA ©Alfa-MOS Technology Corp. Rev.B Sep. 2023 .alfa-mos. Page 1 Alfa-MOS Technology 60V N-Channel Enhancement Mode MOSFET Absolute Maximum Ratings(TA=25℃ Unless otherwise noted) Parameter Symbol...