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AFN4608S Datasheet 60V N-Channel Enhancement Mode MOSFET

Manufacturer: Alfa-MOS

Download the AFN4608S datasheet PDF. This datasheet also includes the AFN4608S-Alfa variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (AFN4608S-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN4608S
Manufacturer Alfa-MOS
File Size 693.95 KB
Description 60V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN4608S Datasheet

General Description

AFN4608S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Pin Description ( DFN5X6-8L )

Overview

Alfa-MOS Technology AFN4608S 60V N-Channel Enhancement Mode MOSFET.

Key Features

  • ID= 9A,RDS(ON)= 12mΩ@VGS=10V.
  • ID= 7A,RDS(ON)= 15mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • DFN5X6-8L package design.