AFN4608S - 60V N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN4608S, a member of the AFN4608S-Alfa 60V N-Channel Enhancement Mode MOSFET family.

Description

AFN4608S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

ID= 9A,RDS(ON)= 12mΩ@VGS=10V.
ID= 7A,RDS(ON)= 15mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS (ON).
DFN5X6-8L package design.

Alfa-MOS

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Datasheet Details

Part number	AFN4608S
Manufacturer	Alfa-MOS
File Size	693.95 KB
Description	60V N-Channel Enhancement Mode MOSFET
Datasheet	AFN4608S Datasheet
Additional preview pages of the AFN4608S datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology AFN4608S 60V N-Channel Enhancement Mode MOSFET General Description AFN4608S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN5X6-8L ) Features  ID= 9A,RDS(ON)= 12mΩ@VGS=10V  ID= 7A,RDS(ON)= 15mΩ@VGS=4.

Published: Jan 16, 2025 |