AFN4944WS Datasheet | Alfa-MOS

Description AFN4944WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOP-8P ) 30V N-Channel Enhancement Mode MOSFET Features - ID=12A,RDS(ON)=13mΩ@VGS=10V - ID=10A,RDS(ON)=16mΩ@VGS=4.5V - Super high density cell design for extremely low RDS (ON) - SOP-8P package design Application - Low Current DC/DC Conversion - Load Switch - CCFL Inverter - Power Management in Notebook puter Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Ordering Information Part Ordering No. Part Marking Package AFN4944WSS8RG 4944WS SOP-8P ※ A Lot code ※ B Date code ※ AFN4944WSS8RG : 13” Tape & Reel ; Pb- Free ; Halogen - Free ©Alfa-MOS Technology Corp. Rev.B Nov. 2023 Description Source 1 Gate 1 Source 2 Gate 2 Drain 2 Drain 2 Drain 1 Drain 1 Unit Tape & Reel Quantity 2500 EA .alfa-mos. Page 1 Alfa-MOS Technology 30V N-Channel Enhancement Mode MOSFET Absolute Maximum...