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AFN4944WS - 30V N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN4944WS, a member of the AFN4944WS-Alfa 30V N-Channel Enhancement Mode MOSFET family.

Description

AFN4944WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • ID=12A,RDS(ON)=13mΩ@VGS=10V.
  • ID=10A,RDS(ON)=16mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • SOP-8P package design.

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Datasheet Details

Part number AFN4944WS
Manufacturer Alfa-MOS
File Size 346.77 KB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN4944WS Datasheet
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Alfa-MOS Technology General Description AFN4944WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOP-8P ) AFN4944WS 30V N-Channel Enhancement Mode MOSFET Features  ID=12A,RDS(ON)=13mΩ@VGS=10V  ID=10A,RDS(ON)=16mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  SOP-8P package design Application  Low Current DC/DC Conversion  Load Switch  CCFL Inverter  Power Management in Notebook Computer Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Ordering Information Part Ordering No.
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