AFN4944WS Description
AFN4944WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOP-8P ) AFN4944WS 30V N-Channel Enhancement Mode MOSFET.
AFN4944WS Key Features
- ID=12A,RDS(ON)=13mΩ@VGS=10V
- ID=10A,RDS(ON)=16mΩ@VGS=4.5V
- Super high density cell design for extremely
- SOP-8P package design
- Low Current DC/DC Conversion
- Load Switch
- CCFL Inverter
- Power Management in Notebook puter