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AFP1073E - P-Channel MOSFET

This page provides the datasheet information for the AFP1073E, a member of the AFP1073E-Alfa P-Channel MOSFET family.

Description

AFP1073E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • -20V/-0.6A, RDS(ON)= 620 mΩ@ VGS =-4.5V -20V/-0.5A, RDS(ON)= 860 mΩ@ VGS =-2.5V -20V/-0.4A, RDS(ON)= 1250 mΩ@ VGS =-1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits ESD Protection ( >2KV ) Diode design.
  • in Low Battery Voltage Operation SOT-723 package design.

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Datasheet preview – AFP1073E

Datasheet Details

Part number AFP1073E
Manufacturer Alfa-MOS
File Size 670.45 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP1073E Datasheet
Additional preview pages of the AFP1073E datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP1073E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-723 ) AFP1073E 20V P-Channel Enhancement Mode MOSFET Features -20V/-0.6A, RDS(ON)= 620 mΩ@ VGS =-4.5V -20V/-0.5A, RDS(ON)= 860 mΩ@ VGS =-2.5V -20V/-0.4A, RDS(ON)= 1250 mΩ@ VGS =-1.
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