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AFP1073E Datasheet P-channel MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

AFP1073E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications.

Pin Description ( SOT-723 ) AFP1073E 20V P-Channel Enhancement Mode MOSFET

Key Features

  • -20V/-0.6A, RDS(ON)= 620 mΩ@ VGS =-4.5V -20V/-0.5A, RDS(ON)= 860 mΩ@ VGS =-2.5V -20V/-0.4A, RDS(ON)= 1250 mΩ@ VGS =-1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits ESD Protection ( >2KV ) Diode design.
  • in Low Battery Voltage Operation SOT-723 package design.

More Datasheets from Alfa-MOS

Part Number Description
AFP1073 P-Channel MOSFET
AFP1013 P-Channel MOSFET
AFP1013E P-Channel MOSFET
AFP1023 P-Channel MOSFET
AFP1023E P-Channel MOSFET
AFP1033 P-Channel MOSFET
AFP1033E P-Channel MOSFET
AFP1303 P-Channel Enhancement Mode MOSFET
AFP1413 P-Channel Enhancement Mode MOSFET
AFP1427 P-Channel MOSFET

AFP1073E Distributor