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AFP1303 - P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFP1303, a member of the AFP1303-Alfa P-Channel Enhancement Mode MOSFET family.

Description

AFP1303, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • -20V/-0.45A, RDS(ON)= 600 mΩ@ VGS =-4.5V -20V/-0.35A, RDS(ON)= 800 mΩ@ VGS =-2.5V -20V/-0.25A, RDS(ON)= 1300 mΩ@ VGS =-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-323 package design.

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Datasheet preview – AFP1303

Datasheet Details

Part number AFP1303
Manufacturer Alfa-MOS
File Size 580.72 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP1303 Datasheet
Additional preview pages of the AFP1303 datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology AFP1303 20V P-Channel Enhancement Mode MOSFET General Description AFP1303, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-323 ) Features -20V/-0.45A, RDS(ON)= 600 mΩ@ VGS =-4.5V -20V/-0.35A, RDS(ON)= 800 mΩ@ VGS =-2.5V -20V/-0.25A, RDS(ON)= 1300 mΩ@ VGS =-1.
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