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AFP1303 Datasheet P-channel Enhancement Mode MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology AFP1303 20V P-Channel Enhancement Mode MOSFET.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

AFP1303, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications.

Pin Description ( SOT-323 )

Key Features

  • -20V/-0.45A, RDS(ON)= 600 mΩ@ VGS =-4.5V -20V/-0.35A, RDS(ON)= 800 mΩ@ VGS =-2.5V -20V/-0.25A, RDS(ON)= 1300 mΩ@ VGS =-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-323 package design.

More Datasheets from Alfa-MOS

Part Number Description
AFP1013 P-Channel MOSFET
AFP1013E P-Channel MOSFET
AFP1023 P-Channel MOSFET
AFP1023E P-Channel MOSFET
AFP1033 P-Channel MOSFET
AFP1033E P-Channel MOSFET
AFP1073 P-Channel MOSFET
AFP1073E P-Channel MOSFET
AFP1413 P-Channel Enhancement Mode MOSFET
AFP1427 P-Channel MOSFET

AFP1303 Distributor