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AFP1601E - 20V P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFP1601E, a member of the AFP1601E-Alfa 20V P-Channel Enhancement Mode MOSFET family.

Description

AFP1601E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • -20V/-0.4A, RDS(ON)= 580 mΩ@ VGS =-4.5V -20V/-0.3A, RDS(ON)= 680 mΩ@ VGS =-2.5V -20V/-0.1A, RDS(ON)= 950 mΩ@ VGS =-1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits ESD Protection Diode design.
  • in Low Battery Voltage Operation DFN1.0X0.6-3L package design.

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Datasheet preview – AFP1601E

Datasheet Details

Part number AFP1601E
Manufacturer Alfa-MOS
File Size 774.26 KB
Description 20V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP1601E Datasheet
Additional preview pages of the AFP1601E datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP1601E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN1.0X0.6-3L ) AFP1601E 20V P-Channel Enhancement Mode MOSFET Features -20V/-0.4A, RDS(ON)= 580 mΩ@ VGS =-4.5V -20V/-0.3A, RDS(ON)= 680 mΩ@ VGS =-2.5V -20V/-0.1A, RDS(ON)= 950 mΩ@ VGS =-1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits ESD Protection Diode design–in Low Battery Voltage Operation DFN1.0X0.
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