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AFP1601E Datasheet 20v P-channel Enhancement Mode MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

AFP1601E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications.

Pin Description ( DFN1.0X0.6-3L ) AFP1601E 20V P-Channel Enhancement Mode MOSFET

Key Features

  • -20V/-0.4A, RDS(ON)= 580 mΩ@ VGS =-4.5V -20V/-0.3A, RDS(ON)= 680 mΩ@ VGS =-2.5V -20V/-0.1A, RDS(ON)= 950 mΩ@ VGS =-1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits ESD Protection Diode design.
  • in Low Battery Voltage Operation DFN1.0X0.6-3L package design.

More Datasheets from Alfa-MOS

Part Number Description
AFP1013 P-Channel MOSFET
AFP1013E P-Channel MOSFET
AFP1023 P-Channel MOSFET
AFP1023E P-Channel MOSFET
AFP1033 P-Channel MOSFET
AFP1033E P-Channel MOSFET
AFP1073 P-Channel MOSFET
AFP1073E P-Channel MOSFET
AFP1303 P-Channel Enhancement Mode MOSFET
AFP1413 P-Channel Enhancement Mode MOSFET

AFP1601E Distributor