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AFP3493W - P-Channel MOSFET

This page provides the datasheet information for the AFP3493W, a member of the AFP3493W-Alfa P-Channel MOSFET family.

Description

AFP3493W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • -20V/-7.3A,RDS(ON)=28mΩ@VGS=4.5V -20V/-4.0A,RDS(ON)=32mΩ@VGS=2.5V -20V/-2.2A,RDS(ON)=36mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design.

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Datasheet preview – AFP3493W

Datasheet Details

Part number AFP3493W
Manufacturer Alfa-MOS
File Size 587.07 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP3493W Datasheet
Additional preview pages of the AFP3493W datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP3493W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TSOP-6 ) AFP3493W 20V P-Channel Enhancement Mode MOSFET Features -20V/-7.3A,RDS(ON)=28mΩ@VGS=4.5V -20V/-4.0A,RDS(ON)=32mΩ@VGS=2.5V -20V/-2.2A,RDS(ON)=36mΩ@VGS=1.
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