AFP3493W Datasheet | Alfa-MOS

Description AFP3493W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( TSOP-6 ) 20V P-Channel Enhancement Mode MOSFET Features -20V/-7.3A,RDS(ON)=28mΩ@VGS=4.5V -20V/-4.0A,RDS(ON)=32mΩ@VGS=2.5V -20V/-2.2A,RDS(ON)=36mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design Application Load Switch PA Switch Battery Switch Pin Define Pin 1 2 3 4 5 6 Symbol D D G S D D Ordering Information Part Ordering No. Part Marking Package AFP3493WTS6RG 93WYW TSOP-6 ϡʳ 93W parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A...