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AFP3497 - P-Channel MOSFET

This page provides the datasheet information for the AFP3497, a member of the AFP3497-Alfa P-Channel MOSFET family.

Description

AFP3497, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • -20V/-3.8A,RDS(ON)=100mΩ@VGS=-4.5V -20V/-2.6A,RDS(ON)=140mΩ@VGS=-2.5V -20V/-1.5A,RDS(ON)=190mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design.

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Datasheet preview – AFP3497

Datasheet Details

Part number AFP3497
Manufacturer Alfa-MOS
File Size 530.54 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP3497 Datasheet
Additional preview pages of the AFP3497 datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP3497, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TSOP-6 ) AFP3497 20V P-Channel Enhancement Mode MOSFET Features -20V/-3.8A,RDS(ON)=100mΩ@VGS=-4.5V -20V/-2.6A,RDS(ON)=140mΩ@VGS=-2.5V -20V/-1.5A,RDS(ON)=190mΩ@VGS=-1.
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