Alfa-MOS AFP3497
P-Channel MOSFET
GENERAL DESCRIPTION
AFP3497, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. PinDESCRIPTION
( TSOP-6 ) AFP3497 20V P-Channel Enhancement Mode MOSFETFEATURES
-20V/-3.8A,RDS(ON)=100mΩ@VGS=-4.5V -20V/-2.6A,RDS(ON)=140mΩ@VGS=-2.5V -20V/-1.5A,RDS(ON)=190mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design Application Power Management in Note book Portable Equipment Battery Powered System Net Working System Pin Define Pin 1 2 3 4 5 6 Symbol D D G S D D Ordering Information Part Ordering No. Part Marking Package AFP3497TS6RG 97YW TSOP-6 ϡʳ 97 parts co