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AFP3497 Datasheet PDF

Alfa-MOS AFP3497

P-Channel MOSFET

Part No. AFP3497
Datasheet AFP3497 Download
Manufacturer
Alfa-MOS
Description P-Channel MOSFET
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AFP3497 datasheet page 1 preview

GENERAL DESCRIPTION

AFP3497, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin

DESCRIPTION

( TSOP-6 ) AFP3497 20V P-Channel Enhancement Mode MOSFET

FEATURES

-20V/-3.8A,RDS(ON)=100mΩ@VGS=-4.5V -20V/-2.6A,RDS(ON)=140mΩ@VGS=-2.5V -20V/-1.5A,RDS(ON)=190mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design Application Power Management in Note book Portable Equipment Battery Powered System Net Working System Pin Define Pin 1 2 3 4 5 6 Symbol D D G S D D Ordering Information Part Ordering No. Part Marking Package AFP3497TS6RG 97YW TSOP-6 ϡʳ 97 parts co
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