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AFP4978WS - P-Channel MOSFET

This page provides the datasheet information for the AFP4978WS, a member of the AFP4978WS-Alfa P-Channel MOSFET family.

Description

AFP4978WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -60V/-6A,RDS(ON)= 40mΩ@VGS= -10V.
  • -60V/-5A,RDS(ON)= 48mΩ@VGS= -4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • SOP-8P package design.

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Datasheet Details

Part number AFP4978WS
Manufacturer Alfa-MOS
File Size 339.89 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP4978WS Datasheet
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Alfa-MOS Technology General Description AFP4978WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOP-8P ) AFP4978WS 60V P-Channel Enhancement Mode MOSFET Features  -60V/-6A,RDS(ON)= 40mΩ@VGS= -10V  -60V/-5A,RDS(ON)= 48mΩ@VGS= -4.5V  Super high density cell design for extremely low RDS (ON)  SOP-8P package design Application  Backlight Inverter for LCD Display  Full Bridge DC/DC Converter  Load Switch  CCFL Inverter Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Ordering Information Part Ordering No.
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