AFP5010S Datasheet | Alfa-MOS

Alfa-MOS Technology General Description AFP5010S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( TO-252-2L ) 100 P-Channel Enhancement Mode MOSFET Features -100/-18A,RDS(ON)= 46mΩ@VGS= -10V -100/-10A,RDS(ON)= 52mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Power Switch DC/DC Converters Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part...