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AFP8483 - P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFP8483, a member of the AFP8483-Alfa P-Channel Enhancement Mode MOSFET family.

Description

AFP8483, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -100V/-3.8A,RDS(ON)= 260mΩ@VGS= -10V -100V/-2.6A,RDS(ON)= 290mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) SOT-223 package design.

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Datasheet preview – AFP8483

Datasheet Details

Part number AFP8483
Manufacturer Alfa-MOS
File Size 492.67 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP8483 Datasheet
Additional preview pages of the AFP8483 datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP8483, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-223 ) AFP8483 100V P-Channel Enhancement Mode MOSFET Features -100V/-3.8A,RDS(ON)= 260mΩ@VGS= -10V -100V/-2.6A,RDS(ON)= 290mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) SOT-223 package design Application Motor and Load Control LCD TV Inverter & AD/DC Inverter Systems.
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