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AS7C33256NTD18B - 3.3V 256K x 8 Pipelined SRAM

General Description

The AS7C33256NTD18B family is a high performance CMOS 4 Mbit synchronous Static Random Access Memory (SRAM) organized as 262,144 words × 18 bits and incorporates a LATE LATE Write.

Key Features

  • Organization: 262,144 words × 18 bits.
  • NTD™ architecture for efficient bus operation.
  • Fast clock speeds to 200 MHz.
  • Fast clock to data access: 3.0/3.5/4.0 ns.
  • Fast OE access time: 3.0/3.5/4.0 ns.
  • Fully synchronous operation.
  • Asynchronous output enable control.
  • Available in 100-pin TQFP package www. DataSheet4U. com.
  • Byte write enables.
  • Clock enable for operation hold Logic block diagram A[17:0] 18 D.

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Datasheet Details

Part number AS7C33256NTD18B
Manufacturer Alliance Semiconductor Corporation
File Size 486.52 KB
Description 3.3V 256K x 8 Pipelined SRAM
Datasheet download datasheet AS7C33256NTD18B Datasheet

Full PDF Text Transcription for AS7C33256NTD18B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AS7C33256NTD18B. For precise diagrams, and layout, please refer to the original PDF.

February 2005 ® AS7C33256NTD18B 3.3V 256K×18 Pipelined SRAM with NTDTM Features • Organization: 262,144 words × 18 bits • NTD™ architecture for efficient bus operation • ...

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144 words × 18 bits • NTD™ architecture for efficient bus operation • Fast clock speeds to 200 MHz • Fast clock to data access: 3.0/3.5/4.0 ns • Fast OE access time: 3.0/3.5/4.0 ns • Fully synchronous operation • Asynchronous output enable control • Available in 100-pin TQFP package www.DataSheet4U.com • Byte write enables • Clock enable for operation hold Logic block diagram A[17:0] 18 D • Multiple chip enables for easy expansion • 3.3V core power supply • 2.5V or 3.