AS7C33512FT36A - (AS7C33512FT32A / AS7C33512FT36A) 3.3V 512K x 32/36 Flow-through synchronous SRAM

This page provides the datasheet information for the AS7C33512FT36A, a member of the AS7C33512FT32A (AS7C33512FT32A / AS7C33512FT36A) 3.3V 512K x 32/36 Flow-through synchronous SRAM family.

Datasheet Summary

Description

The AS7C33512FT32A/36A is a high-performance CMOS 16-Mbit synchronous Static Random Access Memory (SRAM) device organized as 524,288 words x 32/36.

Fast cycle times of 8.5/10/12 ns with clock access times (tCD) of 7.5/8.5/10 ns.

Three chip enable (CE) inputs permit easy memory expansion.

Features

Organization: 524,288 words × 32 or 36 bits Fast clock to data access: 7.5/8.5/10 ns Fast OE access time: 3.5/4.0 ns Fully synchronous flow-through operation Asynchronous output enable control Available in 100-pin TQFP packages Individual byte write and global write Multiple chip enables for easy expansion.
3.3V core power supply 2.5V or 3.3V I/O operation with separat.

Alliance Semiconductor Corporation

📥 Download Datasheet

Datasheet Details

Part number	AS7C33512FT36A
Manufacturer	Alliance Semiconductor Corporation
File Size	569.51 KB
Description	(AS7C33512FT32A / AS7C33512FT36A) 3.3V 512K x 32/36 Flow-through synchronous SRAM
Datasheet	AS7C33512FT36A Datasheet
Additional preview pages of the AS7C33512FT36A datasheet.

📁 Similar Datasheet

AS7C33128NTD32A - 3.3V 128K X 32/36 SRAM (Alliance Semiconductor)
AS7C33128NTD36A - 3.3V 128K X 32/36 SRAM (Alliance Semiconductor)
AS7C33256NTD16A - 3.3V 256K X 16/18 SRAM (Alliance Semiconductor)
AS7C33256NTD18A - 3.3V 256K X 16/18 SRAM (Alliance Semiconductor)
AS7C31024 - 5V/3.3V 128K x 8 CMOS SRAM (Alliance Semiconductor)
AS7C31024A - 5V/3.3V 128K x 8 CMOS SRAM (Alliance Semiconductor)
AS7C31025 - 5V/3.3V 128K x 8 CMOS SRAM (Alliance Semiconductor)
AS7C31025C - 3.3V 128K x 8 CMOS SRAM (Alliance Semiconductor)
AS7C31026 - 5V/3.3V 64K x 16 CMOS SRAM (Alliance Semiconductor)
AS7C31026B - 3.3V 64K x 16 CMOS SRAM (Alliance Semiconductor)

Other Datasheets by Alliance Semiconductor Corporation

AS7C33512FT32A - (AS7C33512FT32A / AS7C33512FT36A) 3.3V 512K x 32/36 Flow-through synchronous SRAM
AS7C33512FT18A - 3.3V 512K x 18 Flow-through synchronous SRAM
AS7C33512NTD18A - 3.3V 512K x 18 Pipelined burst Synchronous SRAM
AS7C33512NTD32A - (AS7C33512NTD32A / AS7C33512NTD36A) 3.3V 512K x 32/36 Pipelined SRAM
AS7C33512NTD36A - (AS7C33512NTD32A / AS7C33512NTD36A) 3.3V 512K x 32/36 Pipelined SRAM
AS7C33512NTF18A - 3.3V 512K x 18 Flowthrough Synchronous SRAM
AS7C33512NTF32A - (AS7C33512NTF32A / AS7C33512NTF36A) 3.3V 512K x 32/36 Flowthrough Synchronous SRAM
AS7C33512NTF36A - (AS7C33512NTF32A / AS7C33512NTF36A) 3.3V 512K x 32/36 Flowthrough Synchronous SRAM

Full PDF Text Transcription

Click to expand full text

December 2004 ® AS7C33512FT32A AS7C33512FT36A 3.3V 512K × 32/36 Flow-through synchronous SRAM Features • • • • • • • • Organization: 524,288 words × 32 or 36 bits Fast clock to data access: 7.5/8.5/10 ns Fast OE access time: 3.5/4.0 ns Fully synchronous flow-through operation Asynchronous output enable control Available in 100-pin TQFP packages Individual byte write and global write Multiple chip enables for easy expansion • • • • • 3.3V core power supply 2.5V or 3.3V I/O operation with separate VDDQ Linear or interleaved burst control Snooze mode for reduced power-standby Common data inputs and data outputs www.DataSheet4U.

Published: Jan 1, 2009 |