AS4C32M16D1 - 32M x 16 bit DDR Synchronous DRAM

Alliance Semiconductor

Key Features

Fast clock rate: 200MHz.
Differential Clock CK & CK.
Bi-directional DQS.
DLL enable/disable by EMRS.
Fully synchronous operation.
Internal pipeline architecture.
Four internal banks, 8M x 16-bit for each bank.
Programmable Mode and Extended Mode registers - CAS Latency: 2, 2.5, 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved.
Individual bytes write mask control.
DM Write Latency = 0.
Auto Refresh and Self Refresh.
8192.

AS4C32M16D1 32m x 16 bit ddr synchronous dram by Alliance Semiconductor - Datasheet Preview

Datasheet Details

Part number	AS4C32M16D1
Manufacturer	Alliance Semiconductor
File Size	1.09 MB
Description	32M x 16 bit DDR Synchronous DRAM
Datasheet	AS4C32M16D1 Datasheet

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Full PDF Text Transcription (Reference)

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AS4C32M16D1 Revision History AS4C32M16D1 - 60-Ball, 8x13x1.2 mm (max) TFBGA PACKAGE Revision Details Rev 1.0 Preliminary datasheet Date August 2014 Confidential 1 Rev. 1.0 Aug. /2014 AS4C32M16D1 32M x 16 bit DDR Synchronous DRAM (SDRAM) TFBGA option - Advanced (Rev. 1.0, Aug. /2014) Features  Fast clock rate: 200MHz  Differential Clock CK & CK  Bi-directional DQS  DLL enable/disable by EMRS  Fully synchronous operation  Internal pipeline architecture  Four internal banks, 8M x 16-bit for each bank  Programmable Mode and Extended Mode registers - CAS Latency: 2, 2.