Download the AS4C32M16SC-7TIN datasheet PDF.
This datasheet also covers the AS4C16M32SC-7TIN variant, as both devices belong to the same 512m sdram family and are provided as variant models within a single manufacturer datasheet.
Key Features
Fully Synchronous to Positive Clock Edge.
Fast clock rate: 133 MHz.
Multiple Burst Read with Single Write Operation.
Four Banks controlled by BA0 & BA1.
Data Mask for Byte Control (x16,x32).
Programmable Mode registers
- CAS Latency: 1 or 2 or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: Sequential or Interleaved.
Note: The manufacturer provides a single datasheet file (AS4C16M32SC-7TIN-AllianceSemiconductor.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for AS4C32M16SC-7TIN (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AS4C32M16SC-7TIN. For precise diagrams, and layout, please refer to the original PDF.
Revision History 512M SDRAM 54/86pin TSOP II Package Revision Details Rev 1.0 Preliminary datasheet AS4C16M32SC-7TIN AS4C32M16SC-7TIN AS4C64M8SC-7TIN Date Sep. 2018 Allia...
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AS4C16M32SC-7TIN AS4C32M16SC-7TIN AS4C64M8SC-7TIN Date Sep. 2018 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 24 - Rev.1.0 Sep. 2018 AS4C16M32SC-7TIN AS4C32M16SC-7TIN AS4C64M8SC-7TIN 1 Overview This chapter gives an overview of the 512-Mbit Synchronous DRAM component product and describes its main characteristics. 1.
AS4C32M16SC-7TIN Datasheet
