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AS4C512M16D3LB - 8Gbit DDR3L

Key Features

  • JEDEC Standard Compliant.
  • Power supplies: VDD & VDDQ = +1.35V.
  • Backward compatible to VDD & VDDQ = +1.5V ±0.075V.
  • Operating temperature: Commercial: TC = 0~95°C Industrial: TC = -40~95°C.
  • Supports JEDEC clock jitter specification.
  • Fully synchronous operation.
  • Fast clock rate: 800MHz.
  • Differential Clock, CK & CK#.
  • Bidirectional differential data strobe - DQS & DQS#.
  • 8 internal banks for concurrent operation.
  • 8n-bit prefetch architecture.

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Datasheet Details

Part number AS4C512M16D3LB
Manufacturer Alliance Semiconductor
File Size 2.17 MB
Description 8Gbit DDR3L
Datasheet download datasheet AS4C512M16D3LB Datasheet

Full PDF Text Transcription for AS4C512M16D3LB (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AS4C512M16D3LB. For precise diagrams, and layout, please refer to the original PDF.

AS4C512M16D3LB Revision History 8Gbit DDR3L AS4C512M16D3LB 8 BANKS X 64Mbit X 16 Dual Die Package (DDP) 96ball FBGA Package Revision Details Rev 1.0 Preliminary datasheet...

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DP) 96ball FBGA Package Revision Details Rev 1.0 Preliminary datasheet Date May 2019 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 86 - Rev.1.0 May 2019 AS4C512M16D3LB 512M x 16 bit DDR3L Synchronous DRAM (SDRAM) Features  JEDEC Standard Compliant  Power supplies: VDD & VDDQ = +1.35V  Backward compatible to VDD & VDDQ = +1.5V ±0.

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