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AS7C1026C - 5V 64K x 16 CMOS SRAM

General Description

A write cycle is accomplished by asserting write enable (WE) and chip enable (CE).

Data on the input pins I/O0 through I/O15 is written on the rising edge of WE (write cycle 1) or CE (write cycle 2).

Key Features

  • JEDEC standard packaging.
  • ESD protection > _ 2000 volts - 44-pin 400 mil SOJ - 44-pin TSOP 2-400 Pin arrangement 44-Pin SOJ (400 mil), TSOP 2 A4 A3 A2 A1 A0 CE I/O0 I/O1 I/O2 I/O3 VCC GND I/O4 I/O5 I/O6 I/O7 WE A15 A14 A13 A12 NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE UB LB I/O15 I/O14 I/O13 I/O12 GND VCC I/O11 I/O10 I/O9 I/O8 NC A8 A9 A10 A11 NC Logic block diagram A1 A2 A3 A4 A.

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Datasheet Details

Part number AS7C1026C
Manufacturer Alliance Semiconductor
File Size 287.41 KB
Description 5V 64K x 16 CMOS SRAM
Datasheet download datasheet AS7C1026C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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September 2006 A AS7C1026C ® 5 V 64K X 16 CMOS SRAM • Industrial (-40o to 85oC) temperature • Organization: 65,536 words × 16 bits • Center power and ground pins for low noise • High speed - 15 ns address access time - 6 ns output enable access time • Low power consumption via chip deselect • Easy memory expansion with CE, OE inputs • TTL-compatible, three-state I/O • Upper and Lower byte pin Features • JEDEC standard packaging • ESD protection > _ 2000 volts - 44-pin 400 mil SOJ - 44-pin TSOP 2-400 Pin arrangement 44-Pin SOJ (400 mil), TSOP 2 A4 A3 A2 A1 A0 CE I/O0 I/O1 I/O2 I/O3 VCC GND I/O4 I/O5 I/O6 I/O7 WE A15 A14 A13 A12 NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE UB LB I/O15 I/O14 I/O1