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128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect
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AS8C403600 AS8C401800
Features
128K x 36, 256K x 18 memory configurations Supports high system speed: Commercial: – 150MHz 3.8ns clock access time LBO input selects interleaved or linear burst mode Self-timed write cycle with global write control ( GW l ( ), byte write enable (BWE), and byte writes ( BWx) 3.3V core power supply Power down controlled by ZZ input 3.3V I/O Optional - Boundary Scan JTAG Interface (IEEE 1149.1 compliant) Packaged in a JEDEC Standard 100-pin plastic thin quad flatpack (TQFP).
Description
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TheAS8C403600/1800 are high- speed SRAMs organized as 128K x 36/256K x 18.