AS8C803600 Datasheet | Alliance Semiconductor

256K X 36, 512K X 18 3.3V Synchronous SRAMs AS8C803600 3.3V I/O, Burst Counter AS8C801800 Pipelined Outputs, Single Cycle Deselect Features 256K x 36, 512K x 18 memory configurations Supports high system speed: - 150MHz 3.8ns clock access time - - - - - - - - LBO input selects interleaved or linear burst mode Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) 3.3V core power supply Power down controlled by ZZ input 3.3V I/O supply (VDDQ) Packaged in a JEDEC Standard 100-pin thin plastic quad flatpack (TQFP) Description The 256K x 36 / 512K x 18. The SRAMs contain write, data, address and control registers. Internal logic allows the...