AS8C803600 - 3.3V Synchronous SRAMs

Product Overview

Alliance Semiconductor

Datasheet Details

Part number	AS8C803600
Manufacturer	Alliance Semiconductor
File Size	8.09 MB
Description	3.3V Synchronous SRAMs
Datasheet	AS8C803600 Datasheet
Additional preview pages of the AS8C803600 datasheet.

Product details

Description

The 256K x 36 / 512K x 18. The SRAMs contain write, data, address and control registers.Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write cycle.The burst mode feature offers the highest level of performance to the system designer, as the AS8C803600/801800 can provide four cycles of data for a single address presented to the SRAM.An internal burst address counter accepts the first cycle address from the processor,

Features

256K x 36, 512K x 18 memory configurations Supports high system speed:.
150MHz 3.8ns clock access time.
LBO input selects interleaved or linear burst mode Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) 3.3V core power supply Power down controlled by ZZ input 3.3V I/O supply (VDDQ) Packaged in a JEDEC Standard 100-pin thin plastic quad flatpack (TQFP).

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Other Datasheets by Alliance Semiconductor

AS8C803601 - 3.3V Synchronous ZBT SRAMs
AS8C801800 - 3.3V Synchronous SRAMs
AS8C801801 - 3.3V Synchronous ZBT SRAMs
AS8C161831 - 2.5V Synchronous SRAMs
AS8C163631 - 2.5V Synchronous SRAMs
AS8C401800 - 3.3V Synchronous SRAMs

Published: Oct 10, 2014 |