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AO3400A - 30V N-Channel MOSFET

General Description

The AO3400A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is suitable for use as a load switch or in PWM applications.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO3400A 30V N-Channel MOSFET General Description Product Summary The AO3400A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V) 30V 5.7A < 26.5mW < 32mW < 48mW SOT23 Top View Bottom View D D D S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG G S Maximum 30 ±12 5.7 4.7 30 1.4 0.