Datasheet Details
| Part number | AO3400A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 310.40 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AO3400A_AlphaOmegaSemiconductors.pdf |
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Overview: AO3400A 30V N-Channel MOSFET General.
| Part number | AO3400A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 310.40 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AO3400A_AlphaOmegaSemiconductors.pdf |
|
|
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Product Summary The AO3400A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is suitable for use as a load switch or in PWM applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V) 30V 5.7A < 26.5mW < 32mW < 48mW SOT23 Top View Bottom View D D D S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG G S Maximum 30 ±12 5.7 4.7 30 1.4 0.9 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 70 100 Maximum Junction-to-Lead Steady-State RqJL 63 Max 90 125 80 Units V V A W °C Units °C/W °C/W °C/W Rev 3.1: July 2023 www.aosmd.com Page 1 of 5 AO3400A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 mA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±12V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA 0.65 1.05 1.45 V ID(ON) On state drain current VGS=4.5V, VDS=5V 30 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5.7A VGS=4.5V, ID=5A TJ=125°C 18 26.5 mW 28 38 19 32 mW VGS=2.5V, ID=3A 24 48 mW gFS Forward Transconductance VDS=5V, ID=5.7A 33 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V IS Maximum Body-Diode Continuous Current 2 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AO3400A | N-Channel MOSFET | Kexin |
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AO3400 | N-Channel MOSFET | Kexin |
 |
AO3400 | N-Channel MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| AO3400 | 30V N-Channel MOSFET |
| AO3401 | 30V P-Channel MOSFET |
| AO3401A | 30V P-Channel MOSFET |
| AO3401L | P-Channel MOSFET |
| AO3402 | 30V N-Channel MOSFET |
| AO3402L | N-Channel MOSFET |
| AO3403 | 30V P-Channel MOSFET |
| AO3404 | N-Channel MOSFET |
| AO3404A | N-Channel MOSFET |
| AO3405 | P-Channel MOSFET |