Datasheet Details
| Part number | AO3401A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 318.91 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AO3401A_AlphaOmegaSemiconductors.pdf |
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Overview: AO3401A 30V P-Channel MOSFET General.
| Part number | AO3401A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 318.91 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AO3401A_AlphaOmegaSemiconductors.pdf |
|
|
|
Product Summary The AO3401A uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation gate voltages as low as 2.5V.
This device is suitable for use as a load switch or other general applications.
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS=-2.5V) -30V -4.0A < 50mW < 60mW < 85mW SOT23 Top View Bottom View D D D S G G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±12 -4 -3.2 -27 1.4 0.9 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 70 100 Maximum Junction-to-Lead Steady-State RqJL 63 Max 90 125 80 Units V V A W °C Units °C/W °C/W °C/W Rev 3.1: December 2023 www.aosmd.com Page 1 of 5 AO3401A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -30 IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250mA -0.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -27 VGS=-10V, ID=-4.0A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-3.5A VGS=-2.5V, ID=-2.5A gFS Forward Transconductance VDS=-5V, ID=-4.0A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current V -1 mA -5 ±100 nA -0.9 -1.3 V A 41 50 mW 62 75 47 60 mW 60 85 mW 17 S -0.7 -1 V -2 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitanc
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AO3401A | P-Channel MOSFET | Kexin |
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AO3401A | P-Channel MOSFET | VBsemi |
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AO3401 | P-Channel MOSFET | VBsemi |
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AO3401 | P-Channel MOSFET | Kexin |
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AO3401 | P-Channel Enhancement-Mode MOSFETs | HAOHAI |
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| AO3400A | 30V N-Channel MOSFET |
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| AO3402L | N-Channel MOSFET |
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