Datasheet Details
| Part number | AO4266 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 375.60 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet | AO4266-AlphaOmegaSemiconductors.pdf |
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Overview: AO4266 60V N-Channel MOSFET General.
| Part number | AO4266 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 375.60 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet | AO4266-AlphaOmegaSemiconductors.pdf |
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• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 60V 10A < 15mΩ < 19mΩ Applications • Synchronus Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom View D D D D D G S S S Orderable Part Number AO4266 Package Type SO-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS VDS Spike 10µs VSPIKE Power Dissipation B TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL G Form Tape & Reel S Minimum Order Quantity 3000 Maximum 60 ±20 10 8 40 20 20 72 3.1 2.0 -55 to 150 Units V V A A mJ V W °C Typ Max Units 31 40 °C/W 59 75 °C/W 16 24 °C/W Rev.1.0: June 2014 www.aosmd.com Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 60 IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.5 VGS=10V, ID=10A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=9A gFS Forward Transconductance VDS=5V, ID=10A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VG
Compare AO4266 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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