Datasheet Details
| Part number | AO4266E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 329.98 KB |
| Description | 60V N-Channel MOSFET |
| Download |
AO4266E Download (PDF)
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| Part number | AO4266E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 329.98 KB |
| Description | 60V N-Channel MOSFET |
| Download |
AO4266E Download (PDF)
|
|
|
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • Logic Level Gate Drive • ESD Protected • Excellent Gate Charge x RDS(ON) Product (FOM) • RoHS and Halogen-Free Compliant Applications • High Frequency Switching and Synchronous Rectification Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested 60V 11A < 13.5mΩ < 18mΩ HBM Class 2 Top View D D D D SOIC-8 Bottom View G S S S PIN1 Orderable Part Number Package Type AO4266E SO-8 D PIN1 G S Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.3mH C VDS Spike G 10μs TA=25°C Power Dissipation B TA=70°C VDS VGS ID IDM IAS EAS VSPIKE PD Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 11 8.5 44 14 29 72 3.1 2.0 -55 to 150 Units V V A A mJ V W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 31 59 Maximum Junction-to-Lead Steady-State RqJL 16 Max 40 75 24 Units °C/W °C/W °C/W Rev.1.1: August 2023 www.aosmd.com Page 1 of 5 AO4266E Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 60 IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.2 VGS=10V, ID=11A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=9A gFS Forward Transconductance VDS=5V, ID=11A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Co
AO4266E 60V N-Channel AlphaSGT TM General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AO4266 | N-Channel MOSFET | Kexin |
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AO4266 | 60V N-Channel MOSFET | VBsemi |
| Part Number | Description |
|---|---|
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