Datasheet Details
| Part number | AO4296 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 367.72 KB |
| Description | N-Channel MOSFET |
| Datasheet | AO4296-AlphaOmegaSemiconductors.pdf |
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Overview: AO4296 100V N-Channel AlphaSGT TM General.
| Part number | AO4296 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 367.72 KB |
| Description | N-Channel MOSFET |
| Datasheet | AO4296-AlphaOmegaSemiconductors.pdf |
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Applications • Synchronous Rectification for AC/DC Quick Charger 100% UIS Tested 100% Rg Tested 100V 13.5A < 8.3mΩ < 10.6mΩ SOIC-8 Top View Bottom View D D D D D G S S S Orderable Part Number AO4296 Package Type SO-8 G S Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS VDS Spike Power Dissipation B 10µs TA=25°C TA=70°C VSPIKE PD Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 13.5 10.5 55 33 54 120 3.1 2.0 -55 to 150 Units V V A A mJ V W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 31 59 Maximum Junction-to-Lead Steady-State RθJL 16 Max 40 75 24 Units °C/W °C/W °C/W Rev.2.0: June 2016 www.aosmd.com Page 1 of 5 AO4296 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 100 Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1.3 VGS=10V, ID=13.5A Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=11.5A Forward Transconductance VDS=5V, ID=13.5A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz f=1M
| Part Number | Description |
|---|---|
| AO4290A | 100V Channel AlphaSGT |
| AO4292 | 100V N-Channel MOSFET |
| AO4292E | 100V N-Channel MOSFET |
| AO4294 | 100V N-Channel MOSFET |
| AO4202 | 30V N-Channel MOSFET |
| AO4240 | 40V N-Channel MOSFET |
| AO4260 | 60V N-Channel MOSFET |
| AO4262E | N-Channel MOSFET |
| AO4264 | 60V N-Channel MOSFET |
| AO4264C | 60V N-Channel MOSFET |