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AO4413 - 30V P-Channel MOSFET

General Description

The AO4413 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS (V) = -30V ID = -15A RDS(ON) < 7mΩ (VGS = -20V) RDS(ON) < 8.5mΩ (VGS = -10V) SOIC-8 Top View SD SD SD GD D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±25 -15 -12.8 -80 3 2.1 -55 to 150 Thermal Characteristics Parameter Ma.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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June 2002 AO4413 P-Channel Enhancement Mode Field Effect Transistor General Description The AO4413 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -30V ID = -15A RDS(ON) < 7mΩ (VGS = -20V) RDS(ON) < 8.5mΩ (VGS = -10V) SOIC-8 Top View SD SD SD GD D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±25 -15 -12.8 -80 3 2.