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AO4422 - N-Channel MOSFET

General Description

The AO4422 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.

Key Features

  • VDS (V) = 30V ID = 11A RDS(ON) < 15mΩ (VGS = 10V) RDS(ON) < 24mΩ (VGS = 4.5V) SD SD SD GD SOIC-8 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 11 9.3 50 3 2.1 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-.

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Other Datasheets by Alpha & Omega Semiconductors

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Jan 2003 AO4422 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4422 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Features VDS (V) = 30V ID = 11A RDS(ON) < 15mΩ (VGS = 10V) RDS(ON) < 24mΩ (VGS = 4.