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AO4422A Datasheet N-channel Fet

Manufacturer: Alpha & Omega Semiconductors

Overview: AO4422A N-Channel Enhancement Mode Field Effect Transistor General.

General Description

The AO4422A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This www.DataSheet4U.com device is suitable for use as a load switch or in PWM applications.

The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.

Key Features

  • VDS (V) = 30V ID = 11A (V GS = 10V) RDS(ON) < 15mΩ (VGS = 10V) RDS(ON) < 24mΩ (VGS = 4.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 30 ±20 11 9.3 50 3 2.1 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Paramete.

AO4422A Distributor