Datasheet Details
| Part number | AO4420A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 165.30 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AO4420A_AlphaOmegaSemiconductors.pdf |
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Overview: AO4420A 30V N-Channel MOSFET General.
| Part number | AO4420A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 165.30 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AO4420A_AlphaOmegaSemiconductors.pdf |
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The AO4420A uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics.
This device is suitable for use as a synchronous switch in PWM applications.
Product Summary VDS (V) = 30V ID = 13.7A (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 10V) RDS(ON) < 12mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom View D D D D D G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current AF TA=70°C ID Pulsed Drain Current B IDM Avalanche Current B IAR Repetitive avalanche energy L=0.3mH B EAR Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 13.7 9.7 60 20 60 3.1 2 -55 to 150 Thermal Characteristics Parameter Symbol Typ Max Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t ≤ 10s Steady-State RθJA 28 54 40 75 Maximum Junction-to-Lead C Steady-State RθJL 21 30 Units V V A A mJ W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AO4420 | N-Channel MOSFET | Freescale |
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AO4420 | N-Channel MOSFET | VBsemi |
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AO4420 | N-Channel MOSFET | Kexin |
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