Datasheet4U Logo Datasheet4U.com

AO4480 - 40V N-Channel MOSFET

Datasheet Summary

Description

The AO4480 uses advanced trench technology to provide excellent RDS(ON), low gate charge.

It is ESD Protected.

This device is suitable for use as a low side switch in SMPS and general purpose applications.

📥 Download Datasheet

Datasheet preview – AO4480

Datasheet Details

Part number AO4480
Manufacturer Alpha & Omega Semiconductors
File Size 294.72 KB
Description 40V N-Channel MOSFET
Datasheet download datasheet AO4480 Datasheet
Additional preview pages of the AO4480 datasheet.

📁 Similar Datasheet

  • AO4480 - 40V N-Channel Enhancement Mode MOSFET (MAOYUAN)
  • AO4480 - 40V N-ChanneI MOSFET (UMW)
  • AO4482 - N-Channel MOSFET (Freescale)
  • AO4482 - N-Channel MOSFET (Kexin)
  • AO4484 - N-Channel MOSFET (Kexin)
  • AO4485 - P-Channel MOSFET (Kexin)
  • AO4485 - P-Channel MOSFET (Freescale)
  • AO4401 - P-Channel MOSFET (Freescale)
  • AO4402 - N-Channel MOSFET (Freescale)
  • AO4403 - P-Channel MOSFET (Freescale)
Other Datasheets by Alpha & Omega Semiconductors

Full PDF Text Transcription

Click to expand full text
AO4480 40V N-Channel MOSFET General Description The AO4480 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD Protected. This device is suitable for use as a low side switch in SMPS and general purpose applications. Product Summary VDS (V) = 40V ID = 14A (VGS = 10V) RDS(ON) < 11.5mW (VGS = 10V) RDS(ON) < 15.5mW (VGS = 4.5V) ESD Rating: 4KV HBM 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom View D D D D D G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current AF TA=70°C IDSM Pulsed Drain Current B IDM Power Dissipation TA=25°C TA=70°C PD Avalanche Current B IAR Repetitive avalanche energy 0.
Published: |