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AO4480 - 40V N-Channel MOSFET

General Description

The AO4480 uses advanced trench technology to provide excellent RDS(ON), low gate charge.

It is ESD Protected.

This device is suitable for use as a low side switch in SMPS and general purpose applications.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4480 40V N-Channel MOSFET General Description The AO4480 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD Protected. This device is suitable for use as a low side switch in SMPS and general purpose applications. Product Summary VDS (V) = 40V ID = 14A (VGS = 10V) RDS(ON) < 11.5mW (VGS = 10V) RDS(ON) < 15.5mW (VGS = 4.5V) ESD Rating: 4KV HBM 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom View D D D D D G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current AF TA=70°C IDSM Pulsed Drain Current B IDM Power Dissipation TA=25°C TA=70°C PD Avalanche Current B IAR Repetitive avalanche energy 0.